International audienceAn original surface passivation technique of indium tin oxide (ITO) used as anode in organic solar cells is proposed. We demonstrate that a thin MoO3 film (3.5 +/- 1 nm) at the interface ITO/organic donor allows improving significantly the devices' performances. The devices are based on the multiheterojunction structure copper phthalocyanine (CuPc)/fullerene (C-60)/aluminum tris(8-hydroxyquinoline) (Alq(3)). The deposition of MoO3 onto ITO improves the charge transfer from CuPc to ITO. The enhancement in the hole collection efficiency in the presence of an oxide layer can be explained in terms of the reduction in the effective barrier against hole transfer from CuPc into the ITO anode. The contact ITO/MoO3/CuPc behaves like a metal-insulator-semiconductor (MIS) structure, which allows reducing the energy barrier due to the difference between the work function of ITO and the highest occupied molecular orbital of CuPc. It is shown that the optimum MoO3 thickness corresponds to a compromise between an optimum ITO coverage and a sufficient transparency of the trapezoidal barrier for the tunneling of the charge carriers. The MoO3 thin films are discontinuous, and the passivation effect is improved when the oxide thin film is covered by an ultrathin gold film. Such behavior is discussed in the light of band scheme structures after contact and of geometrical considerations

International audienceWhile they have different electronic properties n-type MoO3 and p-type NiO are very efficient as buffer layers between the ITO anode and the organic electron donor in organic photovoltaic cells. While it is admitted that MoO3 is n-type, its band structure is still under study. Here, the band alignment at the interface of an ITO/MoO3 heterojunction is studied by X-ray photoelectron spectroscopy (XPS). The same study is realized on the structure ITO/NiO, NiO being a p-type semiconductor. The measurements have been performed on samples obtained under the same experimental conditions as those used to achieve organic photovoltaic cells. The MoO3 (NiO) upper layer was 3 nm thick. The semidirect XPS technique used to measure the band offsets allows us to estimate the band discontinuities at the interface ITO/MoO3: ΔEv = 0.50 eV and ΔEc = 0.90 eV, while at the interface ITO/NiO we have ΔEv = −2.10 eV and ΔEc = −1.90 eV. Therefore, n-type MoO3 and p-type NiO, which are both very efficient anode buffer layers (ABLs), exhibit different band structure at the contact with ITO. However, the measurement, by means of a Kelvin probe, of the work functions of the structures ITO/NiO and ITO/MoO3, shows that they are close and significantly higher than that of ITO alone

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