The evolution during silicon solar cell processing of performance-limiting iron impurities is investigated with synchrotron-based x-ray fluorescence microscopy. We find that during industrial phosphorus diffusion, bulk precipitate dissolution is incomplete in wafers with high metal content, specifically ingot border material. Postdiffusion low-temperature annealing is not found to alter appreciably the size or spatial distribution of FeSi2 precipitates, although cell efficiency improves due to a decrease in iron interstitial concentration. Gettering simulations successfully model experiment results and suggest the efficacy of high- and low-temperature processing to reduce both precipitated and interstitial iron concentrations, respectively
In this work we examine the effectiveness of hydrogen passivation at grain boundaries as a function of defect type and microstructure in multicrystalline silicon. We analyze a specially prepared solar cell with alternating mm-wide bare and SiNx-coated stripes using laser beaminduced current (LBIC), electron backscatter diffraction (EBSD), synchrotron-based X-ray fluorescence microscopy (µ-XRF), and defect etching to correlate preand post-hydrogenation recombination activity with grain boundary character, density of iron-silicide nanoprecipitates, and dislocations. This study reveals that the microstructure of boundaries that passivate well and those that do not differ mostly in the character of the dislocations along the grain boundary, while iron silicide precipitates along the grain boundaries (above detection limits) were found to play a less significant role.
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