The effect of irradiation on the carrier mobility in inversion channels of MOS structures of thermally grown SiO2 as a function of band bending Ys and temperature T is studied. Possible physical models which explain the decreasing of carrier mobility both on the left‐and right‐hand side of the maximum of the μseff(Ys)‐dependence are discussed. New data on the formation of fast surface states at the Si–SiO2 interface by different types of irradiation are given.

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