The subband transitions in dual-band n-B-n InAs/GaSb type-II superlattice infrared photodetector are identified by the photoresponse (PR) spectra. In the mid- and long-wavelength PR spectra measured by changing bias polarity, each spectrum individually shows a series of distinctive peaks related to the transitions from the hole subbands to the conduction one. The PR mechanism at each polarity is discussed in terms of diffusion and tunneling currents.
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