Alloy nanocrystals provide an additional degree of freedom in selecting desirable properties for nanoscale engineering because their physical and optical properties depend on both size and composition. We report the pyrolytic synthesis of homogeneously alloyed CdS(x)Se(1-x) nanocrystals in all proportions. The nanocrystals are characterized using UV-visible absorption spectroscopy, transmission electron microscopy, X-ray diffractrometry, and Rutherford backscattering spectrometry to determine precisely structure, size, and composition. The dependence of band gap on nanocrystal size and composition is elucidated, yielding a bowing constant of 0.29, in agreement with bulk values. In addition, the morphology of the resultant nanocrystals can be altered by changing the reaction conditions, generating structures ranging from homogeneous, spherical nanocrystals to one-dimensional gradient nanorods.

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Nitrogen incorporation at the SiO2/SiC interface via high temperature nitric oxide annealing leads to the passivation of electrically active interface defects, yielding improved inversion mobility in the semiconductor. However, we find that such nitrided oxides can possess a larger density of hole traps than as-grown oxides, which is detrimental to the reliability of devices (e.g., can lead to large threshold voltage instabilities and to accelerated failure). Three different charge injection techniques are used to characterize this phenomenon in metal–oxide–semiconductor structures: x-ray irradiation, internal photoemission and Fowler–Nordheim tunneling. Some nitrogen-based atomic configurations that could act as hole traps in nitrided SiO2 are discussed based on first-principles density functional calculations.

Radiation induced charge trapping in ultrathinHfO 2 -based n-channel MOSFETs is characterized as a function of dielectric thickness and irradiation bias following exposure to 10 keV X-rays and/or constant voltage stress. Positive and negative oxide-trap charges are observed, depending on irradiation and bias stress conditions. No significant interface-trap buildup is found in these devices under these irradiation and stress conditions. Enhanced oxide-charge trapping occurs in some cases for simultaneous application of constant voltage stress and irradiation, relative to either type of stress applied separately. Room temperature annealing at positive bias after irradiation of transistors with thicker gate dielectric films leads to positive oxide-trapped charge annihilation and/or neutralization in these devices, and net electron trapping. The oxide thickness dependence of the radiation response confirms the extreme radiation tolerance of thin HfO 2 dielectric layers of relevance to device applications, and suggests that hole traps in the thicker layers are located in the bulk of the dielectric. A revised methodology is developed to estimate the net effective charge trapping efficiency, , for high-dielectric films. As a result, estimates of for Hf silicate capacitors and Al 2 O 3 transistors in previous work are reduced by up to 18%.Index Terms-Constant-voltage-stress (CVS), Hafnium oxide (HfO 2 ), high-, metal-oxide-semiconductor-field-effect-transistors (MOSFETs), radiation damage, recovery, ultrathin, X-ray.