The growth of thin (80-200 A ) oxide films by rapid thermal processing (RTP) on LPCVD poly and amorphous silicon is reported. Oxide growth kinetics are affected by dopant concentration, implant species, and preoxidation anneal conditions. Breakdown fields > 11 MV/ cm have been measured. Constant current stress measurements indicate a higher rate of negative charge trapping in oxides grown on top of polysilicon as compared to amorphous silicon.

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The effects of rapid thermal processing (RTP) on the electrical properties of thin gate oxides in MOS devices have been studied. MOS capacitors have been analyzed by capacitance-voltage (C-V), current-voltage (I-V), and constant current stress techniques. MOSFET degradation due to hot carrier injection has also been investigated. No significant RTP-induced degradation was detected in any category of the device properties considered here. An abnormal trapping behavior was observed on the wafer annealed at 1 100°C for 5 seconds.

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