Potassium acid phthalate (COOKC6H4COOH) single crystals were grown from aqueous solutions. The cleavage surfaces were examined by multiple-beam interferometry. Solvent etching was used to delineate the dislocations, and their distribution and branching were investigated. The (001), (010) and (100) faces were subjected to pyramidal indentation to study the slip process.

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Phthalic anhydride single crystals were grown from the melt by Bridgman's method. These crystals were cut perpendicular to the c-axis and cleaved along the (110) faces. NH4OH:H2O (1:3 by volume) was found to reveal dislocations on both (001) and (110) faces. The dislocation density on annealed and unannealed samples was determined. Indentations were made on these faces and the slip traces observed were used to identify the slip planes as (110).

Interdiffusion of molecular acceptors through organic layers to metal substrates mimics doping-related energy level shifts Appl. Phys. Lett. 95, 093305 (2009); 10.1063/1.3213547 Evidence that the gold donor and acceptor in silicon are two levels of the same defect Appl. Phys. Lett. 42, 680 (1983); 10.1063/1.94070 Optical properties of gold acceptor and donor levels in silicon