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In this work, In-Zn-S thin layers were prepared using the spray pyrolysis technique on glass substrates at 320• C. ] one was taken constant equal to 2. The atomic composition was carried out with the atomic absorption. The structural study of all layers via X-ray diffraction and atomic force microscopy shows that the layer, obtained using x = 0 is formed by binary material In2S3 with a principal orientation along (400). When the composition increases the same study depicts the presence of other materials such as ZnO, ZnS, and ZnIn2S4. On the contrary, for x = 0.4, the film is mainly formed by the ternary compound ZnIn2S4 which crystallizes in cubic phase. Moreover, the optical analysis via the transmittance, reflectance as well as the photocurrent reveals that the band gap energy Eg increases slightly as a function of the x composition (Eg varies from 2.6 to 2.9 eV).

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ZnIn 2 S 4 nanofilms were grown on In 2 S 3 substrates. The band gap of ZnIn 2 S 4 barriers was approximately 2.8 eV at room temperature. The morphology and structure of the obtained nanofilms were already investigated via transmission electron microscope (TEM), scanning electron microscope (SEM) and X-ray diffraction analyses.1,2 In this paper, thermal analyses are performed via a photothermal technique, which has been used to indirectly evaluate the specific heat capacity of the obtained Zn -doped nanofilms. The yielded value for an optimal zinc-to-indium ratio, x (0.33), at the mean room temperature (T∞ = 301 K ), was Cs ≈ 411.5 J K -1 kg -1.