-The design and analysis of a novel wideband, monolithic, bandpass, π π π π-network, voltage controlled attenuator (VCA) is presented. A 24 to 32 GHz VCA was developed using 0.15µ µ µ µm GaAs pHEMT technology. This is the first reported VCA to use a bandpass filter topology to achieve the required operating frequency band and eliminate the effects of parasitic capacitances of the pHEMTs. The bandpass filter absorbs the parasitic capacitances and thereby eliminates their detrimental effects.The measured attenuation dynamic range is 12dB ± ± ± ± 0.5dB with minimum insertion loss of 2-3dB. The input power handling capability is up to 0dBm. The VCA is well matched and may be placed in a 50Ω Ω Ω Ω system [1].

W O Ka-band power amplifier MMICs, 4W and 6W, with high power density and gain are presented. Each amplifier was designed using a 5-stage topology to demonstrate over 30dB of gain. The 4W design exhibited a peak saturated output power of 37.2dBm and a chip output power density of 532mWmm'. This is the highest recorded power density for a Ka-band power amplifier design to date.The high gain and power density of these designs make them ideal for low-cost Ka-band transmit systems.

-The design and analysis of a novel wideband, monolithic, bandpass, π π π π-network, voltage controlled attenuator (VCA) is presented. A 24 to 32 GHz VCA was developed using 0.15µ µ µ µm GaAs pHEMT technology. This is the first reported VCA to use a bandpass filter topology to achieve the required operating frequency band and eliminate the effects of parasitic capacitances of the pHEMTs. The bandpass filter absorbs the parasitic capacitances and thereby eliminates their detrimental effects.The measured attenuation dynamic range is 12dB ± ± ± ± 0.5dB with minimum insertion loss of 2-3dB. The input power handling capability is up to 0dBm. The VCA is well matched and may be placed in a 50Ω Ω Ω Ω system [1].