16kbit 1T-1C FeRAM arrays are demonstrated at 130nm node with TiN/HfO2:Si/TiN ferroelectric capacitors integrated in the Back-End-of-Line (BEOL). Zero bit failure is reported at the array level, with memory window fully open down to 2.5V programming voltage, capacitor area down to 0.16µm² and switching speed down to 4ns. Promising endurance is reported at the array level up to 10 7 cycles. For the first time, solder reflow compatibility is demonstrated for HfO2-based FeRAM. These results pave the way to competitive ultra-low power embedded non-volatile memories at more advanced nodes.

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