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The properties of PbS thin films deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) method were analyzed and applied in PbS/CdS heterojuction solar cells. In this study for n-type layer, cadmium sulfide thin films were deposited on transparent conductive oxide (ITO) substrates by Chemical Bath Deposition (CBD) technique followed by deposition of PbS film using different deposition cycles, 15, 20, 30, 40 and 60 to obtain different thicknesses from 90 nm to 658 nm. Morphological, structural and optical properties were investigated. The roughness of the PbS films were found to be in the range of 10-162 nm, depending on the number of cycles. The films of PbS present a band gap value of 0.6 eV. PbS/CdS heterojunctions were studied as solar cells, it was observed that 40 cycles PbS film has a greater photovoltaic conversion efficiency.

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In this work we apply simple layer solution deposition methods for the assembling of CdS/P3HT (poly(3-hexylthiophene)) p-n heterostructures and analyzed their photodetection properties in the visible optical range. The CdS-n layers were deposited on ITO-coated glass substrates by the chemical bath method employing an ammonia-free recipe. The P3HT-p layers were deposited on the CdS/ITO/glass substrates by the casting method from solution by dissolving P3HT in chloroform. As the back electrodes, to complete the p-n heterostructures, carbon (graphite) was used. The electrical properties of the assembled CdS/P3HT hybrid photodiodes in dark and under illumination at several intensities, in the 0-100 mW/cm 2 interval, were analyzed from current density versus voltage (J-V) measurements, in the-5V to 5V bias voltage range. From these measurements, the photosensitivity of the photodiodes as a function of bias voltage was determined as 370 mA/W. The response of the photodiodes as a function of illumination intensity was determined from transient photocurrent measurements.