The effects of the confined LO phonon-electron interaction on the binding energy of shallow donors confined in a GaAs-Gal -,Al,As quantum well are investigated. The barrier potential height is taken into account. Using the variational method of Lee-Low-Pines, we find that the effect of this interaction is negligible for very narrow quantum wells. For thick quantum wells, the polaronic contribution is quite large.

We have calculated the effects of the electron–confined LO phonon interactions on the ground bound state of a shallow donor impurity located on the axis of the quantum well wire (QWW) as a function of the size of the QWW. The results indicate that the effect of electron–confined LO phonon coupling on the binding energy increases as the confinement length increases and this effect is much more pronounced than that in quasi‐two‐dimensional quantum well structures.

We have calculated the effects of the longitudinal optical phonons on the exciton binding energy in a quantum well, comisting of a single slab of GaAs sandwiched between two semi-infinite slabs of Gal-,AI,As, as a function of the size of the GaAs well. We have found that the correction due to the bulk-like LO-phonon effects on the exciton binding energy is quite larger than that due to thc confined LO-phonon effects and that these effects on the binding energy of the light-hole exciton are larger than those of the hcavy-hole exciton. Our results are compared with recent experimental data, and good agreement has been found.

The energy of an electron interacting with the confined longitudinaloptical (LO) phonons in a rectangular quantum well wire is calculated as a function of the length of one size of the wires by a modified Lee-Low-Pines variational method. It is shown that in a very small wire the electron self-energy has a peak. But for larger wires, the self-energies increase monotonically. It is also found that the energies of the quasi-one-dimensional polaron are related to the sizes of the crosssection rather than to the cross-sectional area of the wire.PACS 73.20 -Surface and interface electron states. PACS 71.38 -Polarons and electron-phonon interactions.

The polaron effect on the binding energy of a hydrogenic impurity in a semiconductor quantum well is calculated by a variational approach taking into account the quasi-two-dimensional and the realist structures of systems. For the finite potential barrier, a correction is obtained as a function of the well thickness and presents a maximum; its evolution is analogous to the binding energy. PACS 71.38 -Polarons and electron-phonon interactions. PACS 71.35 -Excitons and related phenomena (including electron-hole drops).