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The effect of the two-step process on the properties of graphene oxide (GO) is studied. At the first stage, CH4 (or CH2+N2) plasma treatment was performed. The second one was heat treated at a temperature of 650° C. The formation of thin polycrystalline carbon films on the surface of graphene oxide was detected. The ratio of carbon to oxygen concentration corresponds to graphene oxide. Smooth surfaces of the films were detected by an atomic force microscope. Films have lower sheet resistance and higher carrier mobility than reduced GO (rGO) during the same heat treatment. An analysis of the Raman spectra shows that the formed films have larger graphene domains than the rGO. The presence of nitrogen in methane plasma leads to a decrease in the resistance and mobility of carriers in the carbon film.

In the work, the properties of graphene oxide processed in methane plasma and plasma of a mixture of methane and nitrogen and subjected to subsequent annealing at T = 650 ° C in an argon atmosphere are investigated. It is shown that during plasma treatment, the hydrogenated amorphous carbon film is deposited on the surface of the exhaust gas. During heat treatment, a significant part of this film is removed, another part of the carbon atoms participates in the formation of bonds with the structure of the exhaust gas. This process leads to a decrease in the density of defects introduced by the plasma. The inclusion of nitrogen in methane plasma leads to n or p doping depending on the plasma power level. This effect is explained by the predominant formation of graphite and pyridine nitrogen configurations, which are donor centers in structures with fewer defects. At a high density of defects, pyrrole nitrogen structures, which are acceptor centers, are mainly introduced.

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