Graphene and its related materials have attracted much interest in sensing applications because of their optimized ratio between active surface and bulk volume. In particular, several forms of oxidized graphene have been studied to optimize the sensing efficiency, sometimes moving away from practical solutions to boost performance. In this paper, we propose a practical, high-sensitivity, and easy to fabricate gas sensor based on high quality graphene oxide (GO), and we give the rationale to the high performance of the device. The device is fabricated by drop-casting water-dispersed single-layer GO flakes on standard 30 μm spaced interdigitated Pt electrodes. The exceptional size of the GO flakes (27 μm mean size and ∼500 μm maximum size) allows single GO flake to bridge adjacent electrodes. A typical p-type response is observed by testing the device in both reducing and oxidizing environments. The specific response to NO 2 is studied by varying the operating temperature and the gas concentration. Sensing activity is demonstrated to be mainly mediated by the oxygen functional groups. A 20 ppb detection limit is measured. Besides illustrating a simple and efficient approach to gas sensing, this work is an example of the versatility of graphene oxide, accomplishing tasks that are complementary to graphene.
In this review, we discuss the fundamental characterization of graphene oxide (GO) and its future application perspectives. Morphology is discussed through optical microscopy, fluorescence microscopy, scanning electron microscopy, and atomic force microscopy studies. Chemical, structural, and vibrational properties are discussed through x-ray photoemission spectroscopy and Raman spectroscopy studies. Two easy characterization strategies, based on the correlation between x-ray photoemission spectroscopy and contact angle/optical contrast measurements are reported. Sensing and nano-biotechnology applications are discussed with focus on practical gas sensing and optical sensing, on the one hand, and on the toxicity issue of GO, on the other hand. Synthesis and post-synthesis treatments are also discussed, these latter with emphasis on lithography.
We report an optical contrast study of graphene oxide on 72 nm Al 2 O 3 /Si(100) and 300 nm SiO 2 /Si(100) as a function of its reduction degree. The reduction has been performed by means of ultrahigh vacuum thermal annealing from 25 °C (pristine graphene oxide) to 670 °C. In parallel to the optical contrast investigation, performed with optical microscopy, the graphene oxide films have been characterized with core level X-ray photoemission spectroscopy and micro-Raman spectroscopy. The optical contrast of graphene oxide (normalized to the one measured for pure graphene) on both substrates ranges from ∼0.4 to 1.0 for pristine and 670 °C annealed graphene oxide, respectively. Optical microscopy and X-ray photoemission spectroscopy data have been crosscorrelated, leading to calibration graphs that demonstrate that just by simply measuring the optical contrast of graphene oxide one can determine with very good approximation the fraction of sp 2 hybridized carbon.
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