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Electrostatic quadrupole plasma mass spectrometer measurements during thin film depositions using simultaneous matrix assisted pulsed laser evaporation and magnetron sputtering J. Vac. Sci. Technol. A 28, 419 (2010); 10.1116/1.3372401 Growth, structure, and mechanical properties of hydrogenated amorphous carbon nitride films deposited by CH 3 CN dielectric barrier dischargesThe effects of rapid thermal annealing ͑RTA͒ on amorphous hydrogenated carbon-coated film on Si wafer, deposited by CH 4 / Ar dielectric barrier discharge plasma ͑at half of the atmospheric pressure͒, was examined. Bubbles-like structures were formed on the surface of the deposited carbon-coated film. The surface morphology studied by scanning electron microscopy ͑SEM͒, which showed that the effect of RTA on the film changing the morphological property drastically at 600°C and most of the bubbles started evaporating above 200°C. The inbuilt energy dispersive x-ray in SEM gives the quantitative analysis of the annealed surface. X-ray photoelectron spectroscopy results of the as-deposited films agree with the IR results in that the percent of Si-CH 3 , Si-O-Si and C-O͑H͒ stretching vibrational band in the film. Most of these bands disappeared as the sample was annealed at 600°C in Ar medium.