A novel replacement gate design with 1.5-3 nm oxide or remote plasma nitrided oxide gate insulators for sub-lOOnm Al/TiN or W/TiN metal gate nMOSFETs is demonstrated. The source/drain regions are self-aligned to a poly gate which is later replaced by the metal gate. This allows the temperatures after metal gate definition to be limited to 450 OC. Compared to pure SOz, the nitrided oxides provide increased capacitance with less penalty in increased gate current. A saturation transconductance (g,) of 1000 mS/mm is obtained for L,,,=70 nm and tox=1.5 nm. Peak cutoff frequency (fT) of 120 GHz and a low minimum noise figure (NF~") of 0.5 dB with associated gain of 19 dB are obtained for tox = 2 nm and L,,,=80 nm.

Triple-GEM detector technology was recently selected by CMS for a part of the upgrade of its forward muon detector system as GEM detectors provide a stable operation in the high radiation environment expected during the future High-Luminosity phase of the Large Hadron Collider (HL-LHC). In a first step, GEM chambers (detectors) will be installed in the innermost muon endcap station in the pseudo-rapidity region, mainly to control level-1 muon trigger rates after the second LHC Long Shutdown. These new chambers will add redundancy to the muon system in the-region where the background rates are high, and the bending of the muon trajectories due to the CMS magnetic field is small. A novel construction technique for such chambers has been developed in such a way where foils are mounted onto a single stack and then uniformly stretched mechanically, avoiding the use of spacers and glue inside the active gas volume. We describe the layout, the stretching mechanism and the overall assembly technique of such GEM chambers.

Previously it has been shown that resonant-cavity, separate absorption and multiplication (SAM) avalanche photodiodes (APDs) exhibit high peak external quantum efficiency (∼75%), low dark current, low bias voltage (<15 V), and low multiplication noise (0.2<k<0.3). We describe the frequency response of resonant-cavity AlGaAs/GaAs/InGaAs SAM APDs. A unity-gain bandwidth of 23 GHz and a high gain-bandwidth product of 130 GHz have been achieved.

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We report on the design, fabrication, and performance of a photodiode that combines the advantages of a resonant cavity with a separate-absorption-and-multiplication avalanche photodiode. The device is grown on GaAs using molecular beam epitaxy and is designed to detect light near 900 nm. This photodetector has exhibited the following characteristics: an external quantum efficiency of 70%, a spectral linewidth of less than 7 nm, an avalanche gain in excess of 30, and low dark current. In addition, a low excess noise factor corresponding to 0.2 2 IC 10.3 has been achieved.