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Herein, we discuss the synthesis and deposition of thin films amorphous zinc oxide (a: ZnO) by custom-designed spray pyrolysis unit for Thin Film Transistor (TFT) application towards NAND gate fabrication. Top gate top contact TFT was fabricated on a glass substrate, a: ZnO as the channel layer, PVA as gate dielectrics material and Al as electrodes. Electrical properties of a: ZnO TFT (W/L = 500/200μm) were probed. The individual transistor with a threshold voltage (Vth = 2.1 V), off and on current (Ioff = order of 10-8A; Ion = 10-3) and Ion / Ioff ratio (order of 105). The linear mobility is calculated and obtained as 3 cm-2/Vs. NAND gate is one of the universal and basic building blocks of a digital circuit. The fabricated NAND gate is subjected to the logic operation in the range of 0 to 10 V was tested. The result implies that it can be utilized for logical circuit operation.

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