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Amorphous SrBi 2 Nb 2 O 9 films were deposited on ITO/PET by rf magnetron sputtering to investigate their potential as a gate dielectric in organic thin film transistors (OTFTs). The deposition was performed at room temperature using SrBi 2 Nb 2 O 9 target. Achieved SrBi 2 Nb 2 O 9 films have higher capacitance values than thermally grown SiO 2 as characterized by capacitance-frequency measurements. It is also found from current-voltage and roughness measurements that the leakage current and the surface roughness can be least when the films are deposited at room temperature. These room temperature processes are promising for applications to the gate dielectircs of OTFTs. OTFT characteristics were obtained, including carrier mobility as large as 0.03 cm 2 /Vs, on/off current ratio as 10 3 for organic transistor fabricated on PET.