This paper describes the use of InP HEMT technology to develop submillimeter-wave amplifier circuits. The amplifiers are designed using common-gate amplifiers with series inductors, which achieve both high gain and wide bandwidth. Two submillimeter-wave amplifiers are designed. One is a D-band amplifier that achieves a small-signal gain of 15 dB at 160 GHz and a −3 dB bandwidth of 89 GHz between 105 and 194 GHz. The other is a G-band amplifier that achieves a small signal gain of 10 dB at 200 GHz and a −3 dB bandwidth of 80 GHz between 130 and more than 220 GHz. These results demonstrate the design methodology is one of the best candidates for developing submillimeter-wave amplifiers.Index Terms -common-gate amplifier, current reuse topology, D-band, G-band, HEMT, low noise amplifier, spiral inductor, thin film microstrip line.