We report on the intentional n-type doping of the diluted magnetic semiconductor Zn1−xMnxSe using ZnCl2 as the dopant source. Samples with varying Mn concentrations and carrier densities were grown by molecular beam epitaxy and characterized using Hall effect, x-ray diffraction, and photoluminescence measurements. Net carrier concentrations in excess of 1018 cm−3 are readily obtained for x≤0.08. Useful carrier densities can be achieved for Mn concentrations x≤0.15, above which the samples are highly insulating. The controlled doping of this alloy provides another material for use in the fabrication of wide gap semiconductor device structures.

The epitaxial growth of the diluted magnetic semiconductor (DMS) Zn1−xFexSe (0<x≤0.22) by metalorganic vapor phase epitaxy (MOVPE) is reported. The films were grown on (100) GaAs substrates in a vertical stagnation flow reactor with a specially designed inlet to minimize prereactions between the groups II and VI precursors. The precursors used in this study were (CH3)2Zn:N(CH2H5)3, Fe(CO)5, and H2Se diluted in H2 carrier gas. The epilayers were characterized by x-ray diffraction (XRD), Raman, absorption, and x-ray photoelectron spectroscopies (XPS). Typical growth rates were from 3–4 μm/h, which are significantly higher than those obtained by molecular beam epitaxy. Thus, in addition to the growth of DMS multilayer structures, MOVPE appears to be very promising for efficient growth of thick DMS films for Faraday magneto-optical applications.

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