The complex conductivity at the (Verwey) metal-insulator transition in Fe3O4 has been investigated at THz and infrared frequencies. In the insulating state, both the dynamic conductivity and the dielectric constant reveal a power-law frequency dependence, the characteristic feature of hopping conduction of localized charge carriers. The hopping process is limited to low frequencies only, and a cutoff frequency ν1 ≃ 8 meV must be introduced for a self-consistent description. On heating through the Verwey transition the low-frequency dielectric constant abruptly decreases and becomes negative. Together with the conductivity spectra this indicates a formation of a narrow Drude-peak with a characteristic scattering rate of about 5 meV containing only a small fraction of the available charge carriers. The spectra can be explained assuming the transformation of the spectral weight from the hopping process to the free-carrier conductivity. These results support an interpretation of Verwey transition in magnetite as an insulator-semiconductor transition with structure-induced changes in activation energy.

We provide a complete and detailed characterization of the temperature-dependent response to ac electrical fields of LaTiO 3 , a Mott-Hubbard insulator close to the metal-insulator transition. We present combined dc, broadband dielectric, mm-wave, and infrared spectra of ac conductivity and dielectric constant, covering an overall frequency range of 17 decades. The dc and dielectric measurements reveal information on the semiconducting charge-transport properties of LaTiO 3 , indicating the importance of Anderson localization, and on the dielectric response due to ionic polarization. In the infrared region, the temperature dependence of the phonon modes gives strong hints for a structural phase transition at the magnetic ordering temperature. In addition, a gap-like electronic excitation following the phonon region is analyzed in detail. We compare the results to the soft-edge behavior of the optical spectra characteristic for Mott-Hubbard insulators. Overall a consistent picture of the charge-transport mechanisms in LaTiO 3 emerges.