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In this work, we examine the pressure and biaxial tensile strain dependence of the intervalley electron–phonon matrix elements in the lowest conduction band of GaAs, GaP, Si and Ge within the density functional perturbation theory. We study both individual transitions and average deformation potential values which can be used as parameters in transport simulations. In the case of a hydrostatic pressure, we draw the general conclusion that the hydrostatic pressure dependence of the intervalley electron–phonon matrix elements can be safely neglected in the interpretation of most commonly studied phenomena. In contrast, the case of a biaxial strain in silicon shows that strain‐dependence should be taken into account in calculations of the intervalley electron–phonon matrix elements.

UDC 538.915, 538.935 Completely self-consistent ab initio calculations of scattering of electrons between the lowest minima of the conduction band by short-wavelength phonons are performed for the first time for a group of А III В V semiconductor crystals. The structure constants, electron and vibrational spectra, and probabilities of scattering are calculated for the crystals from unified positions within the electronic density functional method. The theory does not involve any phenomenological assumptions on positions of minima in the conduction band, effective carrier masses, interatomic forces, or scattering probabilities. The electron-phonon coupling constants (the deformation potentials) for actual X Γ − , L Γ − , and X L − transitions for scattering between the nonequivalent X X − and L L − valleys in the conduction bands of AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, and InSb crystals with sphalerite structure are calculated. Results obtained are compared with theoretical calculations within the phenomenological rigid ion model and with those performed by the selfconsistent frozen phonon method.

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