We report phosphorescent organic light-emitting diodes with a substantially improved light outcoupling efficiency and a wider angular distribution through applying a layer of zinc oxide periodic nanopillar arrays by pattern replication in non-wetting templates technique. The devices exhibited the peak emission intensity at an emission angle of 40° compared to 0° for reference device using bare ITO-glass. The best device showed a peak luminance efficiency of 95.5 ± 1.5 cd/A at 0° emission (external quantum efficiency - EQE of 38.5 ± 0.1%, power efficiency of 127 ± 1 lm/W), compared to that of the reference device, which has a peak luminance efficiency of 68.0 ± 1.4 cd/A (EQE of 22.0 ± 0.1%, power efficiency of 72 ± 1 lm/W). © 2013 American Institute of Physics

In this paper, we demonstrate organic light emitting devices (OLED) that exhibit high brightness, low driving voltage and long lifetime. Devices with the brightness of 10,000 cd/rn2 can be achieved at 4 V by the use of the high mobility electron-transport layer (ETL) material, bis(1O-hythoxybenzo[h]qmolinato)beryllium (Bebq2), and the mixing host (MH) technology. Electron mobility of Bebq2 is two orders of magnitude higher than that of the typical ETL material, tris-(8-hydroxyquinoline) aluminum (Alq3), from the time-of-flight (TOF) measurement and hence the driving voltage can be decreased. By co-evaporating the hole-transport layer (HTL) material and the ETL material as the host of the emitting layer, it reduces two volts in driving voltage because of its bipolar transport characteristics. MH technology can not only decrease the driving voltage, but also increase the device lifetime since it eliminates the sharp boundary of HTL/ETL interface and decreases the carriers piling up near this interface which causes the organic material degradation. Compared to the conventional heterojunction (HJ) OLED, operation lifetime of MH devices was enhanced by a factor of 4.