Recently, the use and the applicability of reliability prediction models for microelectronic devices using the temperature‐dependent Eyring and Arrhenius function, have been criticized. In fact, the temperature dependence of failure mechanisms of microelectronic devices and electronic equipment in general has been questioned. This paper discusses the effect of temperature on microelectronic failure mechanisms at various device failure sites. This paper also presents information on those mechanisms which may be more appropriately modelled by functions dependent on temperature change, the rate of temperature change and spatial temperature gradients.

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