Articles you may be interested inPhotovoltage imaging of a single As-vacancy at a GaAs(110) surface: Evidence for electron trapping by a charged defect?

Gettering of chromium and copper metal impurities to the damaged regions surrounding an implanted buried oxide has been investigated. Cr tends to segregate to the surface Si-SiO2 interface; only a small fraction moves to the damaged regions surrounding the buried oxide. Cu segregates to the damaged regions more readily; in addition, a large fraction of the implanted Cu moves to a location several micrometers beneath the buried oxide layer. The buried oxide does not appear to stop the movement of the Cu.

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Characteristics of submicrometer MOS transistors on SO1 films have been studied. The SO1 films were formed by implantation of a buried oxide layer followed by epitaxial growth of additional silicon. MOS transistors were fabricated using a process compatible with a submicrometer bulk CMOS process. The final SO1 thicknesses were designed to be 220 and 520 nm after device fabrication; the thickness of the implanted buried oxide was 400 nm. Satisfactory characteristics were obtained for CMOS transistors as short as 0.6 um. In addition, abnormal impurity diffusion did not occur in these implanted-buried-oxide SO1 films. Small-geometry effects, such as threshold-voltage shift, were less severe in the thin SO1 films than in bulk wafers. In this paper we discuss submicrometer CMOS characteristics in thin SO1 films and show that this technology offers significant potential for submicrometer CMOS in addition to the other advantages of SO1 techno1 ogy .