Articles you may be interested inSpin-cluster effect and lattice-deformation-induced Kondo effect, spin-glass freezing, and strong phonon scattering in La 0.7 Ca 0.3 Mn 1 − x Cr x O 3
We study spin accumulation in n-doped GaAs that were electrically injected from Fe via MgO using three-terminal Hanle measurement. The Fe/MgO/GaAs structures were prepared in a cluster molecular beam epitaxy that did not require the breaking of the vacuum. We found the crystal orientation relationship of epitaxial structures Fe[100]//MgO[110]//GaAs[110] without evident defects at the interface. Control of depletion width and interface resistance by means of modulation doping improves spin injection, leading to enhanced spin voltage (ΔV) of 6.3 mV at 10 K and 0.8 mV even at 400 K. The extracted spin lifetime and spin diffusion length of GaAs are 220 ps and 0.77 μm, respectively, at 200 K. MgO tunnel barrier grown in situ with modulation doping at the interface appears to be promising for spin injection into GaAs.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.