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Articles you may be interested inEffect of Pt bottom electrode texture selection on the tetragonality and physical properties of Ba0.8Sr0.2TiO3 thin films produced by pulsed laser deposition J. Appl. Phys. 112, 044105 (2012); 10.1063/1.4748288 Impact of crystallization behavior of Sr x Ti y O z films on electrical properties of metal-insulator-metal capacitors with TiN electrodes Appl. Phys. Lett. 97, 162906 (2010); 10.1063/1.3505323 Electrical properties of ( Ba , Sr ) Ti O 3 thin films revisited: The case of chemical vapor deposited films on Pt electrodes

Uniaxial-mechanical-stress altered gate leakage current and dielectric constant of silicon metal-oxide-semiconductor (MOS) devices with nitrided Hf-silicate (HfSiON) dielectric are measured as a function of uniaxial stress applied using four-point wafer bending along the [110] direction. The gate leakage current and dielectric constant are found to increase by ∼2% per 100MPa of tensile and compressive stresses. A decrease in hole trap activation energy in hafnium oxide-based dielectric is used to explain the mechanical stress altered gate leakage. It is proposed that the HfSiON dielectric constant increase results from band gap narrowing caused by strain induced N p band splitting.

A low temperature method (∼400°C) for nitrogen incorporation in hafnia based dielectrics has been developed for future gate dielectric applications. Hf metal films were deposited on Si substrates in ammonia ambient and were subsequently oxidized under ultraviolet illumination. Using this method, an interfacial layer comprising Hf–Si–O–N bonding was formed at the hafnia-Si interface, which led to a substantial enhancement in the overall dielectric properties of the film. An equivalent oxide thickness of 11.5Å and leakage current densities lower than 10−4A∕cm2 at a gate bias of −1V were achieved by this approach.

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