The compatibility of memristor materials with advanced complementary metal-oxide-semiconductor (CMOS) technology is a key factor for microelectronics element base manufacturing. Therefore, we continued studying previously fabricated CMOS-compatible Ni/Si3N4/SiO2/p+-Si samples. We approximated volt-ampere characteristics (VAC) at different temperatures using the general form of the spatial charge-limiting current (SCLC) equation assuming exponential and Gaussian trap distribution within the band gap of Si3N4. Our approximation demonstrated better experimental data matching compared to previous work, where the approximation was based on the uniform trap distribution law. Further, we performed another additional sample measurement set of the samples to evaluate the parameters of the low-resistance state (LRS) variations at different temperatures. Analysis of these measurements allowed us to estimate the temperatures at which the samples will retain LRS for 10 years.

This paper presents a review of two bottom anti-reflective coating (BARC) removal processes incorporated into subhalfmicron contact etching. They are believed to represent different etching mechanisms. Accuracy of size feature transfer was taken as a primary criterion for comparison of different BARC removal processes. These processes are based on application of glow discharge in the following basic gas mixtures: CF 4 +O 2 and CO+O 2. The first process based on CF 4 +O 2 gas mixture shows a behavior of neutral etching species model that cause a footing developing during BARC removal. Roughly this may be explained by the continuous direction spectrum of neutral active species movement. The access of active neutral species to the BARC layer is dependant upon the window mask size, resist profile and the thickness of resist layer. The second process based on CO+O 2 gas mixture represents another etching mechanism -ion bombardment induced etching. On contrary to the previous partially isotropic process this one provides anisotropic etching. This is due to stimulating and activating the etching reaction by ion bombardment. Anisotropic features are achieved because of directional ion flux normally to wafer surface. This process is proved to be independent of profile and mask opening size features. Data presented show that process based on CO+O 2 gas mixture provides consistent close to zero CD bias at BARC removal step while CF 4 +O 2 gas mixture based process causes negative CD bias with apparent dependence upon the window mask size. Robust results of CO+O 2 process allow one to consider it and its basic etching mechanism to be a mainstream of process development for different applications.

Nanostructured diamond films deposited in microwave (MW) plasma enhanced chemical vapor deposition (CVD) process were evaluated as a potential material for cold emitters in autoemission microdiode and microtriode. Graphite-diamond composite film was chosen for further evaluation after initial feasibility study with unpatterned films. Autoemission currents were detected even at normal conditions without vacuum. Measured IV microdiode and microtriode characteristics showed certain aberration from linearity when plotted with Fowler-Northeim coordinates. A model based on consideration of gradual activation of emitting centers is proposed. Emitter surface roughness plays essential role and it is believed to be have the most sufficient impact on Fowler-Northeim IV curves linearity distortion.