The influence of thermal fluctuations on the dynamics of interfacial electron transfer in sensitized TiO2-anatase semiconductors is investigated by combining ab initio DFT molecular dynamics simulations and quantum dynamics propagation of transient electronic excitations. It is shown that thermal nuclear fluctuations speed up the underlying interfacial electron transfer dynamics by introducing nonadiabatic transitions between electron acceptor states, localized in the vicinity of the photoexcited adsorbate, and delocalized states extended throughout the semiconductor material, creating additional relaxation pathways for carrier diffusion. Furthermore, it is shown that room-temperature thermal fluctuations reduce the anisotropic character of charge diffusion along different directions in the anatase crystal and make similar the rates for electron injection from adsorbate states of different character. The reported results are particularly relevant to the understanding of temperature effects on surface charge separation mechanisms in molecular-based photo-optic devices.

This paper reports visible-light sensitization of TiO 2 nanoparticles by surface modification with Mn(II)-terpyridine complexes, as evidenced by UV-vis spectroscopy of colloidal thin films and aqueous suspensions. Photoexcitation of the [Mn II (H 2 O) 3 (catechol-terpy)] 2+ /TiO 2 (terpy ) 2,2′:6,2′′-terpyridine) complex, attached to the TiO 2 surface, leads to interfacial electron transfer within 300 fs as indicated by ultrafast optical pumpterahertz probe transient measurements and computational simulations. Photoinduced interfacial electron transfer is accompanied by Mn(II) f Mn(III) photooxidation. The half-time for regeneration of the Mn(II) complex is ca. 23 s (at 6 K), as monitored by time-resolved measurements of the Mn(II) EPR signal.

Functionalization of semiconductor nanocrystals can be achieved by anchoring organic ligands to the surface dangling bonds. The resulting surface complexes often introduce electronic states in the semiconductor band gap. These interband states sensitize the host material for photoabsorption at frequencies characteristic of the molecular adsorbates, leading to the well-known process of photoexcitation and subsequent femtosecond interfacial electron transfer. This paper investigates the relaxation dynamics of hole states, energetically localized deep in the semiconductor band gap, after the ultrafast electron-hole pair separation due to interfacial electron transfer. Mixed quantum-classical methods, based on mean-field nuclear dynamics approximated by ab initio density functional theory molecular dynamics simulations, reveal superexchange hole tunneling between adjacent adsorbate molecules in a model study of functionalized TiO2-anatase nanostructures. It is shown that electronic coherences can persist for hundreds of picoseconds under cryogenic and vacuum conditions, despite the partial intrinsic decoherence induced by thermal ionic motion, providing results of broad theoretical and experimental interest.

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