The contactless electrical characterization techniques MDP and MD‐PICTS will be presented in this paper. Both methods are predestined for defect investigation in a variety of semiconductors. Due to a so far not reached sensitivity, major advantages of MDP are its high spatial resolution and its measurement speed, which allows for two dimensional inline measurements at production speed. Furthermore a versatile numerical tool for simulations of electrical properties of a semiconductor as a function of defect parameters was developed. MD‐PICTS is a contactless temperature dependent measurement which allows the determination of activation energies of trap levels in the material. To demonstrate the abilities of both methods, measurements conducted at different semiconductor materials, e.g. silicon, silicon carbide, gallium arsenide and indium phosphide, will be presented exemplarily.

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