This paper reports the stress and frequency analysis of dynamic silicon diaphragm during the simulation of micro-electro-mechanical-systems (MEMS) based piezoresistive pressure sensor with the help of finite element method (FEM) within the frame work of COMSOL software. Vibrational modes of rectangular diaphragm of piezoresistive pressure sensor have been determined at different frequencies for different pressure ranges. Optimal frequency range for particular applications for any diaphragm is a very important so that MEMS sensors performance should not degrade during the dynamic environment. Therefore, for the MEMS pressure sensor having applications in dynamic environment, the diaphragm frequency of 280 KHz has been optimized for the diaphragm thickness of 50 [Formula: see text]m and hence this frequency can be considered for showing the better piezoresistive effect and high sensitivity. Moreover, the designed pressure sensor shows the high linearity and enhanced sensitivity of the order of ([Formula: see text]0.5066 mV/psi).

This paper presents a controlled lateral etchingbased technique for realizing nanogap structures. These structures have applications in different bio-medical/ biochemical sensors. The sensitivity of such sensors depends on the gap size. The method method uses single mask lithography, followed by etching for the first electrode material and lift-off for the second electrode material. Controlled under-etching of the first metal layer defines the gap between two electrodes. Aluminum (0.7 µm) as metal one and titanium (0.2 µm) as metal two was used for fabricating nano-gap electrodes. Gap of 90 nm was achieved using the present technique.