This study reports on post-develop defect for EUV resist process. Presently, research and development of EUV resists are continuously being carried out in terms of resolution, sensitivity, LWR [1,2] . However, in the preparation of EUV lithography for mass-production, research on the reduction of pattern defects, especially post-develop defect is also necessary. As observed during the early stages of resist development for the various lithographic technologies, a large number of pattern defects are commonly coming from the resist dissolution process.As previously reported, utilizing an EUV exposure tool, we have classified several EUV specific defects on exposed and un-exposed area. And also we have reported approaches of defect reduction. [3] In this work, using some types developer solution (TBAH, TBAH+, etc) comparing with current developer solution (TMAH), EUV specific defects were evaluated. Furthermore, we investigated the defect appearing-mechanism and approached defect reduction by track process. Finally, based on these results, the direction of defect reduction approaches applicable for EUV resist processing was discussed.

This study reports on post develop defect on TC-less immersion resist system. There are major defects on TC-less resist system, for example micro-Bridging, Blob and pattern collapse defect, as is well known. Among these defect, we reported Blob and pattern collapse defect could be reduced by Acid rinse involving CO 2 . However, we also reported there was the difference in the effect for each resist.In this work, we show the great effective and slight effective case for post develop defect and we discuss the cause of difference in acid rinse effect. We evaluated and confirmed the effect on each resist, pattern, exposed area location, develop process and so on. Furthermore, we made a mechanism of defect appearing based on the analysis of defect components and the measurement of resist surface condition for each develop process.Finally we show the novel approach to post develop defect reduction on TC-less immersion resist system.