Shortwave infrared (SWIR) sensors have attracted interest due to their usefulness in applications like military and medical equipment. SWIR sensors based on various materials are currently being studied. However, most SWIR detectors need additional optical filters and cooling systems to detect specific wavelengths. In order to overcome these limitations, we proposed a solution processed SWIR sensor that can operate at room temperature using lead chloride (PbS) QDs as a photoactive layer. Additionally, we adapted zinc oxide (ZnO) nanoparticles (NPs) as an electron transport layer (ETL) to improve the sensitivity of a PbS SWIR sensor. In this study, PbS SWIR sensors with and without a ZnO NPs layer were fabricated and their current–voltage (I–V) characteristics were measured. The on/off ratio of the PbS SWIR sensor with ZnO NPs was 2.87 times higher than that of the PbS SWIR sensor without ZnO NPs at the maximum current difference. The PbS SWIR sensor with ZnO NPs showed more stable current characteristics than that without ZnO NPs because of the ZnO NPs’ high electron mobility and proper lowest unoccupied molecular orbital (LUMO) level.

We attempted surface modification in ZnO nanoparticles (NPs) synthesized by the sol–gel process with polyvinyl pyrrolidone (PVP) applied to bulk-heterojunction polymer solar cells (PSCs) as an electron transport layer (ETL). In general, ZnO NPs have trap sites due to oxygen vacancies which capture electrons and degrade the performance of the PSCs. Devices with six different PVP:Zn ratios (0.615 g, 1.230 g, 1.846 g, 2.460 g, 3.075 g, and 3.690 g) were fabricated for surface modification, and the optimized PVP:Zn ratio (2.460 g) was found for PSCs based on P3HT/PCBM. The power conversion efficiency (PCE) of the fabricated PSCs with PVP-capped ZnO exhibited a significant increase of approximately 21% in PCE and excellent air-stability as compared with the uncapped ZnO-based PSCs.

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