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BACKGROUND: Semiconductor-based photoelectrochemical (PEC) water splitting represents one attractive route to generate clean hydrogen. Cu 2 ZnSnS 4 (CZTS) is considered a promising photoelectric material for PEC water splitting due to its high absorption coefficient, small bandgap, nontoxicity, and earth-abundant elements. Only a few critical parameters limit the performance of CZTS nanocrystal films. Of those, heat treatment is essential for producing high-performance films.RESULTS: In this work, CZTS nanocrystals were produced by a facile method and applied in making CZTS films for PEC water reduction. Therefore, the influences of heat treatment parameters on the performance of films were investigated in the lowtemperature heat treatment range. The surfactant polyvinylpyrrolidone (PVP) in the films could not be completely decomposed at low heat treatment temperatures, leading to film resistance that was harmful to the PEC process. Meanwhile, SnS x impurities would arise at temperatures over 400 °C, thus reducing the PEC performance.CONCLUSION: The best activity for PEC water reduction was obtained at 385 °C for 10 min. Furthermore, the PEC performance of CZTS films generated by fast heating (10 °C s −1 ) was superior to that of films generated by slow heating (10 °C min −1 ) due to the inhibition from the development of SnS x impurities.

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