Recent studies on the magneto-transport properties of topological insulators (TI) 1-7 have attracted great attention due to the rich spin-orbit physics and promising applications in spintronic devices. Particularly the strongly spinmoment coupled electronic states have been extensively pursued to realize efficient spin-orbit torque (SOT) switching. However, so far current-induced magnetic switching with TI has only been observed at cryogenic temperatures. It remains a controversial issue whether the topologically protected electronic states in TI could benefit spintronic applications at room temperature. In this work, we report full SOT switching in a TI/ferromagnet bilayer heterostructure with perpendicular magnetic anisotropy at room temperature. The low switching current density provides a definitive proof on the high SOT efficiency from TI. The effective spin Hall angle of TI is determined to be several times larger than commonly used heavy metals. Our results demonstrate the robustness of TI as an SOT switching material and provide a direct avenue towards applicable TI-based spintronic devices.Spin-orbit coupling has been extensively studied for the conversion between charge current and spin current 8 . When neighbored with a ferromagnet (FM), non-equilibrium spins induced by the spin-orbit coupling can exert torques onto magnetic moments (Fig.

Owing to the difficulty in detecting and manipulating the magnetic states of antiferromagnetic materials, studying their switching dynamics using electrical methods remains a challenging task. By employing heavy-metal-rare-earth-transition-metal alloy bilayers, we experimentally study current-induced domain wall dynamics in an antiferromagnetically coupled system. We show that the current-induced domain wall mobility reaches a maximum at the angular momentum compensation point. With experiment and modeling, we further reveal the internal structures of domain walls and the underlying mechanisms for their fast motion. We show that the chirality of the ferrimagnetic domain walls remains the same across the compensation points, suggesting that spin orientations of specific sublattices rather than net magnetization determine Dzyaloshinskii-Moriya interaction in heavy-metal-ferrimagnet bilayers. The high current-induced domain wall mobility and the robust domain wall chirality in compensated ferrimagnetic material opens new opportunities for high-speed spintronic devices.

The successful implementation of spin-wave devices requires efficient modulation of spin-wave propagation. Using cobalt/nickel multilayer films, we experimentally demonstrate that nanometer-wide magnetic domain walls can be applied to manipulate the phase and magnitude of coherent spin waves in a nonvolatile manner. We further show that a spin wave can, in turn, be used to change the position of magnetic domain walls by means of the spin-transfer torque effect generated from magnon spin current. This mutual interaction between spin waves and magnetic domain walls opens up the possibility of realizing all-magnon spintronic devices, in which one spin-wave signal can be used to control others by reconfiguring magnetic domain structures.

Spintronic computing promises superior energy efficiency and nonvolatility compared to conventional field-effect transistor logic. But, it has proven difficult to realize spintronic circuits with a versatile, scalable device design that is adaptable to emerging material physics. Here we present prototypes of a logic device that encode information in the position of a magnetic domain wall in a ferromagnetic wire. We show that a single three-terminal device can perform inverter and buffer operations. We demonstrate one device can drive two subsequent gates and logic propagation in a circuit of three inverters. This prototype demonstration shows that magnetic domain wall logic devices have the necessary characteristics for future computing, including nonlinearity, gain, cascadability, and room temperature operation.

Magnetic domain walls are information tokens in both logic and memory devices, and hold particular interest in applications such as neuromorphic accelerators that combine logic in memory. Here, we show that devices based on the electrical manipulation of magnetic domain walls are capable of implementing linear, as well as programmable nonlinear, functions. Unlike other approaches, domain-wall-based devices are ideal for application to both synaptic weight generators and thresholding in deep neural networks. Prototype micrometer-size devices operate with 8 ns current pulses and the energy consumption required for weight modulation is ≤ 16 pJ. Both speed and energy consumption compare favorably to other synaptic nonvolatile devices, with the expected energy dissipation for scaled 20-nm-devices close to that of biological neurons. Deep neural networks 1, 2 mimic the synaptic and activation functionality of human neurons using repeated applications of linear filters interspersed by nonlinear decision functions. Among other applications, deep neural networks offer promising solutions to image 3 , speech 4 and video 5recognition. Training is performed using a backpropagation learning procedure 6 , with the filter weights updated continuously like synapses, until the calculated output matches the desired output.