Scaling in Silicon technology, usage of SRAM Cells has been increased to large extent while designing the embedded Cache and system on-chips in CMOS technology. Power consumption, packing density and the speed are the major factors of concern for designing a chip. The consumption of power and speed of SRAMs are some important issues among a number of factors that provides a solution which describes multiple designs that minimize the consumption of power and this review article is also based on that. This article presents the simulation of 6T, 9T, LP10T, ST10T and WRE8T SRAM cells. All the simulations have been carried out on 90nm at Microwind EDA tool. General TermsLow Power VLSI design

The rapid progress in semiconductor technology have led the feature sizes of transistor to be shrunk there by evolution of Deep Sub-Micron (DSM) technology; there by the extremely complex functionality is enabled to be integrated on a single chip. In the growing market of mobile hand-held devices used all over the world today, the battery-powered electronic system forms the backbone. To maximize the battery life, the tremendous computational capacity of portable devices such as notebook computers, personal communication devices (mobile phones, pocket PCs, PDAs), hearing aids and implantable pacemakers has to be realized with very low power requirements. Leakage power consumption is one of the major technical problem in DSM in CMOS circuit design.

In this paper we will do the analysis of the gate engineering impact on tri state inverter performance for the application on SOC that is system on chip with the help of different high dielectric material. The high dielectric materials used in electronic circuits for preventing tunnelling effect which will increase the thermally generated current. In order to reduce the Thermally generated current occur s in electronic circuit we can replace the sio 2 with different materials having high dielectric constant. Tri State Inverter is designed by the use of microwind tool or simulator. The performance of Device is analyse for various parameter. It is measured that by the use of high dielectric constant material in Tri State Inverter the thermally generated current and dissipation of power minimised and also the performance of the circuit gets high. Among various high dielectric constant material, Lanthanum oxide La 2 o 3 gained focus due to its property such as High Energy Band Gap, High Dielectric Constant, and can resist upto high Temperature.

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