The etching characteristics of concave and convex corners formed in a microstructure by the intersection of {111} planes in wet anisotropic etchant are exactly opposite to each other. The convex corners are severely attacked by anisotropic etchant, while the concave corners remain unaffected. In this paper, we present a new model which explains the root cause of the initiation and advancement of undercutting phenomenon at convex corners and its absence at concave corners on {110} silicon wafers. This contrary etching characteristics of convex and concave corners is explained by utilizing the role of dangling bond in etching process and the etching behavior of the tangent plane at the convex corner. The silicon atoms at the convex edge/ridge belong to a high etch rate tangent plane as compared to {111} sidewalls, which leads to the initiation of undercutting at the convex corner. On the other hand, all the bonds of silicon atoms pertaining to concave edges/ridge are engaged with neighboring atoms and consequently contain no dangling bond, thus resulting in no-undercutting at concave edges/corners.

In this paper, a simple and robust model is presented to explain the main reason behind undercutting at convex corners and no-undercutting at concave corners. The etch rate of the tangent plane at convex corner and the role of dangling bond in etching process are utilized to explain the undercutting at convex corner and the no-undercutting at concave corner, respectively. The present model shows that {110} is the tangent plane at convex corner which exhibits higher etch rate than the neighboring {111} plane in all types of anisotropic etchants; consequently the undercutting occurs at convex corners. The absence of dangling bonds at concave corner prevents the undercutting there. Moreover, the same model explains the reason of very less undercutting when the etching is carried out in surfactant-added tetramethylammonium hydroxide (TMAH).

In wet anisotropic etching, the etched profile of undercut convex corners depends on the type of etchant. A considerable amount of research has been carried out to explain this convex corner undercutting and to identify the orientation of undercut planes. However, it is not clearly understood why differently shaped undercut fronts appear with different etchants. Moreover, there has been no descriptive explanation regarding the distinct shape of the undercut convex corner in both KOH and TMAH. In this work, corner undercutting on the surface of a Si{100} wafer is thoroughly investigated. The undercutting behavior is examined for two different kinds of etchants (KOH and TMAH). The study is performed by analyzing the etching characteristics of different kinds of convex corners on the mask patterns. One type of corner in the mask design is formed by <110 > directions, while other types are formed by the intersection of different directions, which shapes the undercut convex corner profile. Furthermore, the appearance of etchant-dependent beveled directions at convex corners is clearly explained using the contour plot of the etch-rate data of a silicon hemisphere.

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Wet bulk micromachining is a popular technique for the fabrication of microstructures in research labs as well as in industry. However, increasing the throughput still remains an active area of research, and can be done by increasing the etching rate. Moreover, the release time of a freestanding structure can be reduced if the undercutting rate at convex corners can be improved. In this paper, we investigate a non-conventional etchant in the form of NH2OH added in 5 wt% tetramethylammonium hydroxide (TMAH) to determine its etching characteristics. Our analysis is focused on a Si{1 0 0} wafer as this is the most widely used in the fabrication of planer devices (e.g. complementary metal oxide semiconductors) and microelectromechanical systems (e.g. inertial sensors). We perform a systematic and parametric analysis with concentrations of NH2OH varying from 5% to 20% in step of 5%, all in 5 wt% TMAH, to obtain the optimum concentration for achieving improved etching characteristics including higher etch rate, undercutting at convex corners, and smooth etched surface morphology. Average surface roughness (Ra), etch depth, and undercutting length are measured using a 3D scanning laser microscope. Surface morphology of the etched Si{1 0 0} surface is examined using a scanning electron microscope. Our investigation has revealed a two-fold increment in the etch rate of a {1 0 0} surface with the addition of NH2OH in the TMAH solution. Additionally, the incorporation of NH2OH significantly improves the etched surface morphology and the undercutting at convex corners, which is highly desirable for the quick release of microstructures from the substrate. The results presented in this paper are extremely useful for engineering applications and will open a new direction of research for scientists in both academic and industrial laboratories.