In this paper, a potassium hydroxide solution was used to etch the surface of the mono-crystalline silicon wafer, the sample was prepared at 0.33 Mol, solution temperature 82° C,14 min etching time and by adding 1% of additive texturing material to KOH solution gives more homogeneity, the scanning electron microscope (SEM) indicated that. Moreover, a result using (scaps-1d) software has been presented to compare the experimental and simulated characteristics of the mono-crystalline silicon solar cell. Simulations were performed on silicon-based "p-n" solar cells. Moreover, a comparison between the simulated results and the experimental of the mono-crystalline silicon solar cell using scaps-1d has been presented. It can be concluded that the experimental and simulated values are in great agreement. The experimental results are I sc = 8.763A, V oc = 0.629 V, fill factor = 81.21%, and efficiency = 18.5%, while the simulation results are I sc = 8.729A, V oc = 0.627 V, fill factor = 83.16% and efficiency = 18.72%. When comparing the results obtained in the laboratory with the results extracted from the SCAPS-1D program, a great agreement has been found.