Numerical results for the energy spectra of N electrons on a spherical surface are used as input data to determine the quasiparticle energies and the pairwise "Fermi liquid" interactions of composite fermion (CF) excitations in fractional quantum Hall systems. The quasiparticle energies and their interactions are then used to determine the energy spectra, E vs total angular momentum L, of states containing more than two quasiparticles. The qualitative agreement with the numerical results gives a remarkable new confirmation of the CF picture. [S0031-9007(96)

A high-performance magneto-mechano-triboelectric nanogenerator (MMTEG) is demonstrated for powering a wireless indoor positioning system.

We studied the photoresponse of Pb(Zr0.53Ti0.47)O3 (PZT) thin films by measuring the current–voltage (I–V) curve at several ferroelectric polarization states illuminated by a monochromatic 3.5 eV UV light. The photocurrent in Pt/PZT/Pt capacitors was sensitive to the polarization state, and the poling voltage-dependent photocurrent showed very asymmetric hysteresis behavior. The capacitance that is dependent upon the thickness of the samples was first measured. Then, the capacitance of the interfacial layer at a state with no interdiffusion between Pt and PZT film was extrapolated by using an equivalent circuit model. The result of the extrapolation was 28.1 μF/cm2.

Defects have crucial effects on the electronic and optoelectronic properties of two‐dimensional materials. In this work, we measured the changes in the Raman spectra and electrical conductance of monolayer molybdenum disulfide (MoS2) with increasing defects via thermal annealing in a reducing atmosphere. Raman spectra of the basal plane MoS2 on SiO2 differed from those of the edge and revealed intricate changes upon annealing up to 550°C due to the substitution of adsorbed molecules and the creation of highly concentrated defects. On the other hand, MoS2 on hexagonal boron nitride (h‐BN) presented homogenous Raman spectra over the entire area and showed no noticeable changes in its Raman spectra upon annealing. For MoS2 on h‐BN, the charge transfer between MoS2 and adsorbed molecules and the number of defects created by annealing up to 550°C are not sufficient to change the Raman spectra. The distinct behaviors of the two sample spectra are ascribed to different substrate‐induced doping and interfacial adhesion strengths.