No abstract

No abstract

Herein, we present a solar-blind ultraviolet photodetector realized using atomic layer-deposited p-type cuprous oxide (Cu2O) underneath a mechanically exfoliated n-type β-gallium oxide (β-Ga2O3) nanomembrane. The atomic layer deposition process of the Cu2O film applies bis(N,N′-di-secbutylacetamidinato)dicopper(I) [Cu(5Bu-Me-amd)]2 as a novel Cu precursor and water vapor as an oxidant. The exfoliated β-Ga2O3 nanomembrane was transferred to the top of the Cu2O layer surface to realize a unique oxide pn heterojunction, which is not easy to realize by conventional oxide epitaxy techniques. The current–voltage (I–V) characteristics of the fabricated pn heterojunction diode show the typical rectifying behavior. The fabricated Cu2O/β-Ga2O3 photodetector achieves sensitive detection of current at the picoampere scale in the reverse mode. This work provides a new approach to integrate all oxide heterojunctions using membrane transfer and bonding techniques, which goes beyond the limitation of conventional heteroepitaxy.

Abstract:We demonstrate for the first time that a single-crystalline epitaxial Si-based power devices could not meet these demands due to the small band gap (1.1 eV) and low breakdown field of Si. 2 GaN could replace Si for future power applications because of its higher band gap (3.4eV) and higher breakdown field. One powerful method to examine the epitaxial film quality is cross-sectional TEM imaging. GaN. The well-defined film spots in the diffraction pattern (Fig. S2) peaks are seen in all three samples (Fig. 3 a). The absence of MgO and CaO peaks indicates that phase separation into the two binaries has not occurred. The A "top-to-top" capacitor structure was used to measure the capacitance due to the insulating sapphire substrate under the GaN (Fig. S3). In this measurement, the positive probe is placed in contact with the gate electrode while the negative probe is in contact with the large area of GaN covered by aluminum metal. Since the gate has a serial connection with the large area, the measured capacitance is given by, where m C is the capacitance measured by the LCR meter, g C is the capacitance of the gate and l C is the capacitance of the larger area. Since C l >> C g , the measured capacitance is dominated by the gate: m g C C .The measured room temperature and high temperature CV curves from three Mg x Ca 1-x O /GaN samples as well as an Al 2 O 3 /GaN sample are summarized in Fig. 4.In room temperature studies (Fig. 4 a, b and c there is a 20% dispersion in the same region in the Al 2 O 3 /GaN sample (Fig. 4 d) 20 The detailed measurement procedure and conductance data are summarized in the supporting information (Fig. S5). 18 The measured values of D it are summarized in Fig. 4 i. Two of the samples with epitaxial films show the lowest D it

No abstract