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The absorption spectra of CdSe/ZnO and TiO/MgZnO quantum dot (QD) solar cells were calculated, then their quantum efficiencies (QEs) were studied at different QD sizes and junction depths. Many mechanisms for tuning QE are examined. The first mechanism is doping the QD layer only, which is the case of CdSe, and it gives high QE. The second one is doping the bulk layer in addition to QDs, and it gives low QE but at a wide bandwidth, as in TiO/MgZnO QD solar cells. Changing QD size is also another mechanism that can tune QE and its spectrum. The structures studied cover the range of 120-370 nm, which is important in photodetecting applications.

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The absorption spectrum and quantum efficiency (QE) of cadmium sulphide/zinc oxide quantum dot (QD) photodetectors are studied at different QD sizes and junction depths. It is shown that doping the QD layer gives high QE. The structures studied cover the range 200-270 nm, which is important in photodetector applications. High QE was obtained at QDs with a small height, while wide QE bath was obtained at QD with enough (but not so much) radius.