Computer systems research is often inhibited by the availability of memory designs. Existing Process Design Kits (PDKs) frequently lack memory compilers, while expensive commercial solutions only provide memory models with immutable cells, limited configurations, and restrictive licenses. Manually creating memories can be time consuming and tedious and the designs are usually inflexible. This paper introduces OpenRAM, an open-source memory compiler, that provides a platform for the generation, characterization, and verification of fabricable memory designs across various technologies, sizes, and configurations. It enables research in computer architecture, system-on-chip design, memory circuit and device research, and computer-aided design.

In this paper, a novel differential single-port 12T SRAM bitcell is presented. This bitcell uses a read buffer to eliminate read disturbance, improves the read stability and achieves read static noise margin equal to its hold static noise margin. Using a column-based select signal this bitcell provides a half-select free feature, facilitating a bit-interleaving structure to reduce multi-bit soft errors by conventional error correcting code techniques. By boosting the wordline and select signal voltage, this bitcell can read and write with no error at 300 mV while data can be held down to 250 mV in standby mode. Bitline leakage suppression in 12T bitcell allows more bitcells per bitline for high density SRAMs and provides faster read operation. This paper also introduces OpenRAM, an open-source memory compiler, that provides a platform for the generation, characterization, and verification of fabricable memory designs across various technologies, sizes, and configurations. Using OpenRAM, a 64 kb 12T SRAM macro is designed in IBM 32 nm SOI CMOS technology that operates down to 0.3 V with 50 MHz operating frequency while it functions at 0.9 V with 2.2 GHz operating frequency, as well.

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