The
miniaturization of nanometer-sized multicolor fluorescent features
is of continuous significance for counterfeit security features, data
storage, and sensors. Recent advances in engineering of stimuli-responsive
supramolecular polymeric materials that respond upon exposure to heat
or mechanical force by changing their fluorescence characteristics
open new opportunities as functional lithographic resists. Here, we
demonstrate the patterning of a thermochromic supramolecular material
by thermal scanning probe lithography (t-SPL), an emerging nanofabrication
technique, which allows for ultrafast indentation with a heated probe,
resulting in both fluorescent and topographic nanofeatures. t-SPL
indentation reveals a linear relationship between the temperature
at which material softening occurs and the indentation force in the
range from 200 to 500 nN. The softening temperature decreases as the
heating time increases from 4 μs to 1 ms, following time–temperature
superposition behavior. Our results herein confirm that the fluorescence
contrast, perceivable as a shift from red to green, was obtained by
kinetic trapping of the dissociated state due to ultrarapid cooling
when the probe is removed. We use t-SPL to create highly customized
fluorescence patterns up to 40 × 40 μm2 in size
with a spatial resolution of 86 nm and change the pitch size to modify
the fluorescence intensity when observed by fluorescence microscopy.
As an application, multifaceted security features with nanometer resolution
are explored.
Ferroelectric nanostructures offer a promising route for novel integrated electronic devices such as non-volatile memories. Here we present a facile fabrication route for ferroelectric capacitors comprising a linear array of the ferroelectric random copolymer of vinylidenefluoride and trifluoroethylene (P(VDF-TrFE)) interdigitated with the electrically insulating polymer polyvinyl alcohol (PVA). Micrometer size line gratings of both polymers were fabricated over large area by solution micromolding, a soft lithography method. The binary linear arrays were realized by backfilling with the second polymer. We investigated in detail the device physics. The electrical equivalent circuit is a linear capacitor of PVA in parallel with a ferroelectric capacitor of P(VDFTrFE). The binary arrays are electrically characterized by both conventional Sawyer-Tower and shunt measurements. The dependence of the remanent polarization on the array topography is explained by numerical simulation of the electric field distribution.
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