The PC1D simulation aand origin software were successfully used for the study of Carrier Lifetime and Temperature effect on InGaN Single-Junction Solar Cell. For the simulation, the total device area was 100 cm2, dielectric constant 13.1, band gap 1.35eV, intrinsic constant is 1×1010 cm-3, doping concentration is 1×1017 cm-3, electron number and hole number 1000 and 170 respectively, and the refractive index was 3.58. The optimized temperature and bulk recombination were 25°C and 1000μs respectively along with the efficiency of 18.258 % for both n and p - InGaN solar cell. Several graphs were plotted under the following conditions: a) bulk recombination time of p-InGaN and temperature are kept constant at 1000 μs and 25°C, the variation of bulk recombination time of n - type InGaN solar cell with base current and voltage, maximum current and voltage, and efficiency and maximum power were studied. b) bulk recombination time of n-InGaN and temperature are kept constant at 1000 μs and 25°C, the variation of bulk recombination time of p - type InGaN solar cell with base current and voltage, maximum current and voltage, and efficiency and maximum power were studied.

The sol-gel spin coating method was used for the preparation of the Zinc Oxide which was coated over polymer, transparent, and glass translucent substrates and characterized with the help of a UV-Vis Spectroscope. The wavelength bandgap of those samples was found to be 296nm, 310.5nm, and 330nm respectively. The actual band gap of ZnO is 388nm. Similarly, their optical bandgap energy calculated by the Tauc Plot method were 3.641eV, 3.385eV, and 3.495 eV respectively. The transparent polymer slide has the lowest wavelength bandgap and the translucent glass slide has the highest. Further, the bandgap’s value differs from its actual value to the difference in the absorption process due to the presence of the substrate. These results suggest that the choice of substrate can significantly impact the optical properties and performance of the zinc oxide thin film. This result can be applied in developing and optimizing zinc oxide thin films for various purposes, such as in solar cells, sensors, and optoelectronics. By carefully selecting the substrate, it may be possible to tailor the bandgap energy and other optical properties of the thin film to better suit the specific application.