No abstract

Recently, machine learning (ML) methods have been used to create powerful language models for a broad range of natural language processing tasks. An important subset of this field is that of generating code of programming languages for automatic software development. This review provides a broad and detailed overview of studies for code generation using ML. We selected 37 publications indexed in arXiv and IEEE Xplore databases that train ML models on programming language data to generate code. The three paradigms of code generation we identified in these studies are description-to-code, code-todescription, and code-to-code. The most popular applications that work in these paradigms were found to be code generation from natural language descriptions, documentation generation, and automatic program repair, respectively. The most frequently used ML models in these studies include recurrent neural networks, transformers, and convolutional neural networks. Other neural network architectures, as well as non-neural techniques, were also observed. In this review, we have summarized the applications, models, datasets, results, limitations, and future work of 37 publications. Additionally, we include discussions on topics general to the literature reviewed. This includes comparing different model types, comparing tokenizers, the volume and quality of data used, and methods for evaluating synthesized code. Furthermore, we provide three suggestions for future work for code generation using ML.

Moore's Law states that transistor density will double every two years, which is sustained until today due to continuous multidirectional innovations (such as extreme ultraviolet lithography, novel patterning techniques etc.), leading the semiconductor industry towards 3 nm node (N3) and beyond. For any patterning scheme, the most important metric to evaluate the quality of printed patterns is edge placement error, with overlay being its largest contribution. Overlay errors can lead to fatal failures of IC devices such as short circuits or broken connections in terms of pattern-to-pattern electrical contacts. Therefore, it is essential to develop effective overlay analysis and control techniques to ensure good functionality of fabricated semiconductor devices. In this work we have used an imec N-14 BEOL process flow using litho-etch-litho-etch (LELE) patterning technique to print metal layers with minimum pitch of 48nm with 193i lithography. Fork-fork structures are decomposed into two mask layers (M1A and M1B) and then the LELE flow is carried out to make the final patterns. Since a single M1 layer is decomposed into two masks, control of overlay between the two masks is critical. The goal of this work is of two-fold as, (1) to quantify the impact of overlay on capacitance and (2) to see if we can predict the final capacitance measurements with selected machine learning models at an early stage. To do so, scatterometry spectra are collected on these electrical test structures at (a) post litho, (b) post TiN hardmask etch, and (c) post Cu plating and CMP. Critical Dimension (CD) and overlay measurements for line/space (L/S) pattern are done with SEM post litho, post etch and post Cu CMP. Various machine learning models are applied to do the capacitance prediction with multiple metrology inputs at different steps of wafer processing. Finally, we demonstrate that by using appropriate machine learning models we are able to do better prediction of electrical results.

Defect inspection in semiconductor processes has become a challenging task due to continuous shrink of device patterns (pitches less than 32 nm) as we move from node to node. Current state-of-the-art defect detection tools (optical/e-beam) have certain limitations as these tools are driven by some rule-based techniques for defect classification and detection. These limitations often lead to misclassification of defects, which leads to increased engineering time to correctly classify different defect patterns. In this paper, we propose a novel ensemble deep learning-based model to accurately classify, detect and localize different defect categories for aggressive pitches and thin resists (High NA applications).In particular, we train RetinaNet models using different ResNet, VGGNet architectures as backbone and present the comparison between the accuracies of these models and their performance analysis on SEM images with different types of defect patterns such as bridge, break and line collapses. Finally, we propose a preference-based ensemble strategy to combine the output predictions from different models in order to achieve better performance on classification and detection of defects. As CD-SEM images inherently contain a significant level of noise, detailed feature information is often shadowed by noise. For certain resist profiles, the challenge is also to differentiate between a microbridge, footing, break, and zones of probable breaks. Therefore, we have applied an unsupervised machine learning model to denoise the SEM images to remove the False-Positive defects and optimize the effect of stochastic noise on structured pixels for better metrology and enhanced defect inspection. We repeated the defect inspection step with the same trained model and performed a comparative analysis for "robustness" and "accuracy" metric with conventional approach for both noisy/denoised image pair. The proposed ensemble method demonstrates improvement of the average precision metric (mAP) of the most difficult defect classes. In this work we have developed a novel robust supervised deep learning training scheme to accurately classify as well as localize different defect types in SEM images with high degree of accuracy. Our proposed approach demonstrates its effectiveness both quantitatively and qualitatively.

Several strategies were evaluated focusing on the optimum reliability of thin‐film ceramic capacitors derived from different compositions based on BaTiO3 (BT) and prepared by chemical solution deposition onto nickel foils. Film crystallization was carried out at 800°C under reducing conditions to prevent the detrimental oxidation of the metal electrode while allowing the formation of the pure perovskite phase. In a first approach, compositional modifiers were introduced into the system, yielding to Ba(Ti0.7Zr0.3)O3 (BTZ) and (Ba0.7Sr0.3)TiO3 (BST) solid solutions. Despite the lower permittivities obtained with respect to pure BT, dielectric losses and leakage current densities in these films were observed to improve. With the aim of further optimizing these features, the second approach focuses on the defect chemistry of BST films by incorporation of either donor–acceptor cations (Mn2+ and Nb5+) or single rare‐earth elements (Dy3+ or Y3+“magic ions”) into the perovskite. The leakage conduction in the associated capacitors is revealed to effectively decrease in the first case, whereas doping with rare‐earth cations does not substantially improve the dielectric properties of the ceramics. Processing effects related to the thin‐film configuration, rather distant from the classical scenario used within the technology of multilayer bulk ceramic capacitors, also account for the final properties obtained in the films of this work.