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The quantum oscillatory screening effects on the charge capture process are investigated in quantum plasmas. The Bohr-Lindhard formalism with the modified Debye-Hückel potential is employed for obtaining the electron capture radius and probability as functions of the quantum wave number, projectile energy and ion charge number. It is shown that the oscillatory screening effects suppress the electron capture cross section as well as the capture radius. It is also shown that the electron capture radius increases with decreasing quantum wave number. The oscillatory screening effects on the capture radius are found to increase with an increase of the quantum wave number and the ion charge number. In addition, the domain of the capture cross section is found to decrease due to the quantum oscillatory screening effects and also reduces with an increase of the quantum wave number.

The temperature effects on the nonstationary Karpman–Washimi ponderomotive magnetization are investigated in quantum Fermi plasmas. The cyclotron frequency due to the ponderomotive force of the electromagnetic wave has been obtained as a function of the Fermi Debye length and quantum wavelength. It is found that the Karpman–Washimi ponderomotive magnetization decreases with increasing Fermi temperature. The maximum position of the Fermi Debye length is found to be increased with an increase in the frequency in the small Fermi Debye length domain. It is also shown that the Fermi ponderomotive magnetization decreases with increasing frequency in the large Fermi Debye length domain. In addition, it is shown that the frequency dependence on the ponderomotive magnetization diminishes with increasing Fermi temperature.

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The capacitance (C) and the resistance (R) were measured at various states as the reset process progressed in bipolar-resistance-switching Ta/TaOx/Pt thin film capacitors. The reset process was found to undergo three sequential stages where C and R showed different behavior: increasing C and constant R before an abrupt reset transition, the rapid increase of both C and R upon transition, and saturated C thereafter. These behaviors can be explained in terms of the annihilation of the oxygen vacancies followed by rupture of the conducting channels.