We investigated the band gap of SiZnSnO (SZTO) with different Si contents. Band gap engineering of SZTO is explained by the evolution of the electronic structure, such as changes in the band edge states and band gap. Using ultraviolet photoelectron spectroscopy (UPS), it was verified that Si atoms can modify the band gap of SZTO thin films. Carrier generation originating from oxygen vacancies can modify the band-gap states of oxide films with the addition of Si. Since it is not easy to directly derive changes in the band gap states of amorphous oxide semiconductors, no reports of the relationship between the Fermi energy level of oxide semiconductor and the device stability of oxide thin film transistors (TFTs) have been presented. The addition of Si can reduce the total density of trap states and change the band-gap properties. When 0.5 wt% Si was used to fabricate SZTO TFTs, they showed superior stability under negative bias temperature stress. We derived the band gap and Fermi energy level directly using data from UPS, Kelvin probe, and high-resolution electron energy loss spectroscopy analyses.

Amorphous oxide semiconductors (AOSs) have been extensively researched as promising channel materials for thin-film transistors (TFTs) applied in next-generation displays 1-3 . Among them, functionalised zinc oxide (ZnO) materials have attracted much attention as one promising candidate for high-performance flexible displays due to their excellent electrical characteristics and optical properties 4-6 . Therefore, extensive research has been conducted on the application of Zn-based AOS-TFTs. Especially, indium-zinc-oxide (IZO)-based systems are the leading active layer candidates for high-performance backplanes, as they can form semiconductor and electrode layers that offer unique electrical and mechanical advantages. The high processing temperatures of over 250 °C reached during the post-annealing and/or passivation processes are critical barriers to the use of flexible plastic substrates, such as polycarbonate, polyether sulfone, and polyethylene terephthalate that require processing temperatures below 150 °C.In our previous reports, we investigated the good electrical performance of amorphous silicon-indium-zincoxide (a-SIZO) TFTs adapted to flexible devices, owing to their low processing temperatures of below 150 °C 7-9 . In this study, by taking advantage of the low processing temperature (<150 °C) and optimizing the processing steps, we achieved a-SIZO TFTs with higher mobilities and improved electrical characteristics as compared to those obtained in the previous studies. The origin of the defect state was involved with the creation of oxygen vacancies (V O ) 10 . Carrier generation could modify the position of the Fermi level within the band gap of the oxide thin film. To design a high-performance device, the structure of the interface between the metal electrode and active thin-film channel layer must be optimised, so an exact analysis of the energy band gap of the thin film is

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for electric vehicle application, one of the problems to be solved is defrosting or defogging a windshield or a side mirror without gas-fired heaters. In this paper, we report on a high performance of transparent heater with meshed amorphous-SiinZno (SiZo)/ Ag/ amorphous-SiinZno (SiZo) (SAS) for pure electric vehicles. We have adopted amorphous oxide materials like SIZO since SIZO is well known amorphous oxide materials showing high transparency and smooth surface roughness. With the mesh processing technology, a transparent electrode with high transmittance of 91% and low sheet resistance of 13.8 Ω/ϒ was implemented. When a 10 V supply voltage is applied to transparent heater, the transparent heater on glass substrate was heated up to 130 o C in just 5 seconds and then reached to 250 o c after tens of seconds due to the low sheet resistance. In addition, the SAS transparent meshed heater (TMH) showed high stability under cycling test and long time working stability test. In the context of rapid development of Internet of Things (IoT) and 5 G communications, the gas-free electric vehicle is once again became a main topic of recent research. In order to prepare for the era of electrified transportation, the researcher has focused on the auto parts technology that is used by fuel-free electric vehicles, for example, the transparent heater applied in defrosting or defogging a windshield or a side mirror in the winter 1. High transparency in visible region and high electrical conductivity are two important factors of transparent heaters, and this technology is based on the studies of transparent conductive electrode (TCE). Compared with the TCEs that are used for display applications or solar energy applications, for the purpose of rapid heating, transparent heaters are suggested to have better electrical conductivity 2. Electrical properties of TCEs are usually evaluated by measuring the thin films' resistivity, which could be characterized by the reciprocal product of carrier concentration and mobility 3. For instance, In-Sn-O (ITO) is the dominant material in the TCE industry and also be used in the recent manufacturing process of the side mirror 4. The standard electrical properties of ITO thin films, such as carrier concentration, mobility and corresponding resistivity are about 10 20 cm −3 , 10 cm 2 /V•s and 10 −4 Ω•cm in magnitude 5. It can be seen from the previous studies of TCEs that an ideal method to improve the conductivity of TCE thin films is to limit the carrier concentration and increase the carrier mobility simultaneously 6. Nevertheless, until now, it is too difficult to improve the mobility to 10 3 cm 2 /V•s in magnitude by using the conventional TCE materials 6 : for example, transparent conductive oxides (TCOs), such as ITO, aluminum-zinc-oxide (AZO) 7 , gallium-zinc-oxide (GZO) 2. Their mobility will be limited as a result of carriers scattering when carrier concentration is greater than 10 20 cm −3 8 ; otherwise, nanowire networks such as Ag nanowire (Ag NW) 9 , carbon nanotube (CNT) 10 , whos...