We report the use of thiocyanate as a ligand for lead sulfide (PbS) nanocubes for high-performance, thin-film electronics. PbS nanocubes, self-assembled into thin films and capped with the thiocyanate, exhibit ambipolar characteristics in field-effect transistors. The nearly balanced, high mobilities for electrons and holes enable the fabrication of CMOS-like inverters with promising gains of ∼22 from a single semiconductor material. The mild chemical treatment and low-temperature processing conditions are compatible with plastic substrates, allowing the realization of flexible, nonsintered quantum dot circuits.

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We report ambipolar transport in bottom gold contact, pentacene field-effect transistors (FETs) fabricated by spin-coating and thermally converting its precursor on a benzocyclobutene/SiO2 gate dielectric with chemically modified source and drain electrodes. A wide range of aliphatic and aromatic self-assembled thiolate monolayers were used to derivatize the electrodes and all enhanced electron and hole currents, yet did not affect the observable thin film morphology. Hole and electron mobilities of 0.1–0.5 and 0.05–0.1 cm2/V s are achieved, though the threshold for electron transport was >80 V. These ambipolar FETs are used to demonstrate inverters with gains of up to 94.

Ambipolar pentacene transistors in bottom contact‐bottom gate geometry are fabricated on flexible substrates using parylene as a dielectric and self‐assembled monolayer treatment of the source‐drain electrodes to improve charge injection. Hole and electron mobilities of 0.07‐0.1 cm2 V−1 s−1 and 0.01‐0.04 cm2 V−1 s−1 are achieved. CMOS like inverters are built and gains of up to 110 are reported.

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