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The results of a new application of rapid isothermal processing (RIP) for the junction and ohmic contact formation in compound semiconductors are presented in this paper. In this process, for a particular compound semiconductor a compound is selected so that one element acts as a dopant and the other is one element of the compound semiconductor preferably a high vapor pressure element. A thin layer of this compound is deposited by suitable technique on top of the compound semiconductor followed by low-temperature (∼300–500 °C) RIP step. Results of indium phosphide and cadmium telluride are presented representing group III–V and II–VI, respectively. Preliminary results of CuInSe2 are also presented. This method does not require a sealed quartz ampoule, a capping layer, or a background pressure of high vapor pressure element of the compound semiconductor, as is required in diffusion of most compound semiconductors. This process has resulted in abrupt and shallow junctions having excellent diode characteristics.

AbstracrWe have developed a new rapid isothermal processing technique for the deposition of epitaxial dielectric films (II–VIa fluorides and their mixtures) on silicon and ccmpound semiconductors. In this process, epitaxial dielectric films are deposited in an e-beam system at room teqperature and subsequently subjected to in-situ rapid isothermal annealing by using incoherent light sources incorporated in the e-beam system. Epitaxial dielectric films of CaF2 and CaxS1−xF2 have been deposited on Si, GaAs and InP. In this paper, prelimilifty results of electrical and structural characteristics of. epitaxial dielectric films on Si and cupourd semiconductors are presented.

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