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Dielectric materials have many important functions in the microelectronics industry. The aim of this research is to characterize the dielectric constant of doped zinc-oxide composites using solid state method at microwave frequency. The methods used in this research are solid state method for sample preparation, open ended coaxial probe (OECP) for determining the dielectric constant and FTIR for bonding and IR absorption properties. The OECP results shows a sequential increase in dielectric constant as pure ZnO is doped incrementally with the filler (NiO). It also shows a sequential decrease in dielectric constant as the frequency increases. The FTIR result shows an increase in IR absorption as NiO content increases. The result from SEM was able to distinguish between the filler and matrix for each composition. Therefore NiO can be used as a filler for improving dielectric constant of ZnO as a matrix. The composite can also serve as a good agent for constructing capacitors and other dielectric materials which are hence used in manufacturing electronic and telecommunication gadgets. It was also proven that solid state method is a good method for synthesis of powdered sample like ZnO and NiO for determining their dielectric constant.

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